).a( ytisnetn).a( ).a( ytisnetn)V(poVWm( oP)0u.I0u.Iu.IX00642ytisnetn3210－－●Under development1.21.00.80.60.40.20-80-601.21.00.80.60.40.20-8-6-40-2020Length (um)-4-280Length (um)4060801.21.00.80.60.40.20-60-40-20ConditionsPo=1200 mWPo=1200 mWPo=1200 mWPo=1200 mWθ// 11°, θ⊥ 35°No.9Φ9.020Angle (°)(Tc=25℃, CW)Characteristic value (TYP.)640nm1200 mW350mA1400 mA2.3Vθ∥θ⊥4060Emitter sizeXYFWHM (μm)83.53.625℃40℃500Iop (mA)■ Near Field PatternY1/e (μm)85.04.310001/e2(μm)89.66.0To the PackageTo the Wavelength ϕ9.0mmTO-CAN PackageI-V500Iop (mA)X Profile25℃40℃1000March 2024I-LY Profile■ CharacteristicsItemWavelength (Peak)OutputThreshold currentOperating currentOperating voltageFar Field (FWHM)Terminal connectionsPackage type■ Far Field PatternGH06C01A9G Multi-mode Red Laser Diode■ CW I-L,I-V Temperature120010008006004002000
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