$B!!B@M[8wH/EE$NK\3JE*$J;T>l3HBg$r?^$k$?$a!$%P%k%/7k>=7?B@M[EECS$K2C$(GvKlB@M[EECS$N=lEjF~$K$O0lAX$N9b@-G=2=!&Dc%3%9%H2=$,IT2D7g$G$"$k!#$=$N$?$a$K$O!$$=$N?4B!It$N8wEEJQ49Kl%"%b%k%U%!%9%7%j%3%s!J(Ja-Si:H$B!KKl$N9bIJ $B!!(JIntensive development of thin film solar cells, as well as the bulk crystalline Si solar cells, is proceeding to meet the rapidly growing demand of solar photovoltaic cells. While amorphous Si type solar cells are considered to be the most promising among thin film solar cells, the market requires even higher performance and more cost-competitiveness. The most important issue is to establish a film growth technology for a-Si:H of high deposition rate and high quality. This article describes a novel a-Si:H growth technology called Short-pulse VHF plasma CVD method (S-VHF p-CVD) which we have developed.