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Photocouplers

Phototransistor Output Type <DIP type (4-pin)>
(Ta = 25°C)
Output type
Model No.
Internal
connection
diagram
Features
Approved by
safety standards*5
Pac-
kage
Absolute
maximum ratings
Electro-optical characteristics
Forw
-ard
curr
-ent
IF
(mA)
Isola-
tion
vol-
tage
(AC)
Viso
(rms)
(kV)
Colle
-ctor
-emi
-tter
vol-
tage
VCEO
(V)
Current transfer ratio
Response time
UL
VDE
Oth-
ers
CTR
(%)
MIN.
IF
(mA)
tr
(µs)
TYP.
RL
(Ω)
Single
photo-
transistor
output
PC123XxYSZ1B*1, 3, 4
High isolation voltage,
reinforced insulation
4-pin
DIP
50
5.0
80
50
5
4
100
High isolation voltage, reinforced insulation,
low input current,
high resistance to noise*2
*6
10
5.0
80
50
0.5
4
100
High isolation voltage
50
5.0
80
50
5
4
100
High isolation voltage,
low input current,
high resistance to noise*2
10
5.0
80
100
0.5
4
100
High isolation voltage,
high collector-emitter voltage
50
5.0
350
40
5
4
100
Darlington
photo-
transistor
output
High isolation voltage,
high collector-emitter voltage
50
5.0
350
1 000
1
100
100
*1 Wide lead spacing type is also available. Creepage distance: 6.4 mm or more, wide lead spacing type: 8 mm or more.
*2 CMR: 10 kV/µs MIN.
*3 Lead forming type is also available for surface mounting.
*4 Wide lead spacing type is also available. Compatible with wide lead spacing type lead-forming models for surface-mount use.
*5 Please refer to Specification Sheets for model numbers approved by safety standards.
*6 Optionally available.
PC817XxNSZ1B
(4-pin DIP)